Giant piezoelectricity in PMN-PT thin films: Beyond PZT

Authors
Baek, Seung-HyubRzchowski, Mark S.Aksyuk, Vladimir A.
Issue Date
2012-11
Publisher
CAMBRIDGE UNIV PRESS
Citation
MRS BULLETIN, v.37, no.11, pp.1022 - 1029
Abstract
Microelectromechanical systems (MEMS) incorporating piezoelectric layers provide active transduction between electrical and mechanical energy, which enables highly sensitive sensors and low-voltage driven actuators surpassing the passive operation of electrostatic MEMS. Several different piezoelectric materials have been successfully integrated into MEMS structures, most notably Pb(Zr,Ti)O-3. Piezoelectric materials with larger piezoelectric response, such as the relaxor ferroelectric Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT), would enable further miniaturization. However, this has long been hampered by the difficulties in the synthesis of these materials. This article reviews recent successes not only in synthesizing high-quality epitaxial PMN-PT heterostructures on Si, but also in fabricating PMN-PT microcantilevers, which retain the piezoelectric properties of bulk PMN-PT single crystals. These epitaxial heterostructures provide a platform to build MEMS and nanoelectromechanical system devices that function with large displacement at low drive voltages, such as ultrasound medical imagers, micro-fluidic control, piezotronics, and energy harvesting.
Keywords
EPITAXIAL PB(MG1/3NB2/3)O-3-PBTIO3 FILMS; FERROELECTRIC PROPERTIES; DESIGN; MEMS; SI; FABRICATION; DEPOSITION; STRAIN; SRTIO3; OXIDES; EPITAXIAL PB(MG1/3NB2/3)O-3-PBTIO3 FILMS; FERROELECTRIC PROPERTIES; DESIGN; MEMS; SI; FABRICATION; DEPOSITION; STRAIN; SRTIO3; OXIDES
ISSN
0883-7694
URI
https://pubs.kist.re.kr/handle/201004/128699
DOI
10.1557/mrs.2012.266
Appears in Collections:
KIST Article > 2012
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