Direct Growth and Patterning of Multilayer Graphene onto a Targeted Substrate without an External Carbon Source

Authors
Kang, DongseokKim, Won-JunLim, Jung AhSong, Yong-Won
Issue Date
2012-07
Publisher
American Chemical Society
Citation
ACS Applied Materials & Interfaces, v.4, no.7, pp.3663 - 3666
Abstract
Using only a simple tube furnace, we demonstrate the synthesis of patterned graphene directly on a designed substrate without the need for an external carbon source. Carbon atoms are absorbed onto Ni evaporator sources as impurities, and incorporated into catalyst layers during the deposition. Heat treatment conditions were optimized so that the atoms diffused out along the grain boundaries to form nanocrystals at the catalyst-substrate interfaces., Graphene patterns were obtained under patterned catalysts, which restricted. graphene formation to within patterned areas. The resultant multilayer graphene was characterized by Raman spectroscopy and transmission electron microscopy to verify the high crystallinity and two-dimensional nanomorphology. Finally, a metal-semiconductor diode with a catalyst-graphene contact structure were fabricated and characterized to assess the semiconducting properties of the graphene sheets with respect to the display of asymmetric current-voltage behavior.
Keywords
FEW-LAYER GRAPHENE; LASER RAMAN; FILMS; XPS; FEW-LAYER GRAPHENE; LASER RAMAN; FILMS; XPS; graphene; interface growth; external carbon source
ISSN
1944-8244
URI
https://pubs.kist.re.kr/handle/201004/129112
DOI
10.1021/am300753x
Appears in Collections:
KIST Article > 2012
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