Effect of excimer laser annealing on the properties of ZnO thin film prepared by sol-gel method

Authors
Kim, KyoungwonKim, SangsigLee, Sang Yeol
Issue Date
2012-03
Publisher
ELSEVIER
Citation
CURRENT APPLIED PHYSICS, v.12, no.2, pp.585 - 588
Abstract
Pristine ZnO thin films have been deposited with zinc acetate [Zn(CH3COO)(2)], mono-ethanolamine (stabilizer), and isopropanol solutions by sol-gel method. After deposition, pristine ZnO thin films have been irradiated by excimer laser (lambda = 248, KrF) source with energy density of 50 mJ/cm(2) for 30 sec. The effect of excimer laser annealing on the optical and structural properties of ZnO thin films are investigated by photoluminescence and field emission scanning electron microscope. As-grown ZnO thin films show a huge peak of visible region and a wide full width at half maximum (FWHM) of UV region due to low quality with amorphous ZnO thin films. After KrF excimer laser annealing, ZnO thin films show intense near-band-edge (NBE) emission and weak deep-level emission. The optically improved pristine ZnO thin films have demonstrated that excimer laser annealing is novel treatment process at room temperature. (C) 2011 Elsevier B.V. All rights reserved.
Keywords
ZINC-OXIDE; ZINC-OXIDE; ZnO; Excimer laser; Laser annealing
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/129463
DOI
10.1016/j.cap.2011.09.006
Appears in Collections:
KIST Article > 2012
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