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dc.contributor.authorLim, J. Y.-
dc.contributor.authorSong, J. D.-
dc.contributor.authorChoi, W. J.-
dc.contributor.authorAhn, J. P.-
dc.contributor.authorYang, H. S.-
dc.date.accessioned2024-01-20T16:31:27Z-
dc.date.available2024-01-20T16:31:27Z-
dc.date.created2021-09-05-
dc.date.issued2011-09-
dc.identifier.issn1862-6300-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130039-
dc.description.abstractIn this study, we have attempted a growth of InSb film on the cost-effective, (001)-Si substrate inserting a thin intermediate-layer of In As quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subsequent InSb-growth process, InAs QDs have disappeared leaving instead a thin interlayer of InAs. The resulting 2.8-mu m-thick InSb film on (001) Si is found to have an electron mobility of 40 907 cm(2)/Vs at 300K, which turned out to be the highest value for InSb with comparable thickness grown on Si substrate. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.languageEnglish-
dc.publisherWILEY-BLACKWELL-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectHETEROEPITAXIAL GROWTH-
dc.subject2-STEP GROWTH-
dc.subjectBUFFER LAYERS-
dc.subjectTHIN-FILMS-
dc.subjectSILICON-
dc.titleGrowth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots-
dc.typeArticle-
dc.identifier.doi10.1002/pssa.201026714-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.208, no.9, pp.2104 - 2107-
dc.citation.titlePHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE-
dc.citation.volume208-
dc.citation.number9-
dc.citation.startPage2104-
dc.citation.endPage2107-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000295433600018-
dc.identifier.scopusid2-s2.0-80052495562-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusHETEROEPITAXIAL GROWTH-
dc.subject.keywordPlus2-STEP GROWTH-
dc.subject.keywordPlusBUFFER LAYERS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordAuthorInSb-
dc.subject.keywordAuthorInAs-
dc.subject.keywordAuthorquantum dots-
dc.subject.keywordAuthorsilicon-
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