Polymer-ultrathin graphite sheet-polymer composite structured flexible nonvolatile bistable organic memory devices

Authors
Son, Dong IckShim, Jae HoPark, Dong HeeJung, Jae HunLee, Jung MinPark, Won IlKim, Tae WhanChoi, Won Kook
Issue Date
2011-07-22
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.22, no.29
Abstract
We present data, which were obtained before bending and after bending, for the electrical bistabilities, memory stabilities, and memory mechanisms of three-layer structured flexible bistable organic memory (BOM) devices, which were fabricated utilizing the ultrathin graphite sheets (UGS) sandwiched between insulating poly(methylmethacrylate) (PMMA) polymer layers. The UGS were formed by transferring UGS (about 30 layers) and using a simple spin-coating technique. Transmission electron microscopy (TEM) measurements were performed to investigate the microstructural properties of the PMMA/UGS/PMMA films. Current-voltage (I-V) measurements were carried out to investigate the electrical properties of the BOM devices containing the UGS embedded in the PMMA polymer. Current-time (I-t) and current-cycle measurements under flat and bent conditions were performed to investigate the memory stabilities of the BOM devices. The memory characteristics of the BOM maintained similar device efficiencies after bending and were stable during repeated bendings of the BOM devices. The mechanisms for these characteristics of the fabricated BOM are described on the basis of the I-V results.
Keywords
THIN-FILM; THIN-FILM; ultrathin graphite; polymer hybrid composite; organic bistable memory; space charge limited current
ISSN
0957-4484
URI
https://pubs.kist.re.kr/handle/201004/130172
DOI
10.1088/0957-4484/22/29/295203
Appears in Collections:
KIST Article > 2011
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