Lateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes

Title
Lateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes
Authors
정석구민병돈김용김은규현찬경황성우박정호
Keywords
self-assembled QDs
Issue Date
1999-04
Publisher
Abstracts of MRS 1999 Spring Meeting
Citation
, 362-362
URI
http://pubs.kist.re.kr/handle/201004/13046
Appears in Collections:
KIST Publication > Conference Paper
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