Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

Authors
Choi, YuriKim, Gun HeeJeong, Woong HeeBae, Jung HyeonKim, Hyun JaeHong, Jae-MinYu, Jae-Woong
Issue Date
2010-10-18
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.97, no.16
Abstract
The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm(2)/V s and 8.02 x 10(6), respectively. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3503964]
Keywords
SPECTROSCOPY; CHANNEL; SPECTROSCOPY; CHANNEL; TFT; scandium; carrier; solution process
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/130997
DOI
10.1063/1.3503964
Appears in Collections:
KIST Article > 2010
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