Resistive switching characteristics of TiN/MnO2/Pt memory devices

Abstract

Bipolar resistive switching memory devices with a TiN/MnO2/Pt structure were investigated in a low power operation (250 mu A/+/- 0.6 V). The devices showed good endurance of 10(5) cycles at a 1 mu s pulse and reliable data retention at both RT and 125 degrees C. Moreover, the benefits of a high device yield and potential multilevel storage make them promising devices in next generation nonvolatile memory applications. The cell area dependency suggests that the conducting mechanism in the low resistance states is due to the formation of locally conducting filaments. The results demonstrate the feasibility of high performance resistive switching memory devices based on transition metal oxides by using TiN as the top electrode.