Temperature dependence of the properties of heteroepitaxial Y₂O₃ films grown on Si by ion assisted evaporation

Title
Temperature dependence of the properties of heteroepitaxial Y₂O₃ films grown on Si by ion assisted evaporation
Authors
M.-H. ChoD.-H. KoK. JeongI. W. LyoS. W. WhangboH. B. KimS. C. Choi송종한S. J. ChoC. N. Whang
Keywords
Y₂O₃; channeling; growth; epitaxy; ICB
Issue Date
1999-07
Publisher
Journal of applied physics
Citation
VOL 86, NO 1, 198-204
URI
http://pubs.kist.re.kr/handle/201004/13130
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
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