Decrease of gate leakage current by employing Al sacrificial layer in the DLC-coated Si-tip FEA fabrication

Title
Decrease of gate leakage current by employing Al sacrificial layer in the DLC-coated Si-tip FEA fabrication
Authors
주병권이상조김훈이윤희오명환
Keywords
FED; Si-tip field emitter; DLC; gate-leakage current; sacrificial layer; field emission; field emission display
Issue Date
1999-08
Publisher
대한전기학회논문지 : 전기물성,응용부문 C; The Transactions of The Korean Institute of Electrical Engineers
Citation
VOL 48C, NO 8, 577-579
URI
http://pubs.kist.re.kr/handle/201004/13159
Appears in Collections:
KIST Publication > Article
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