Decrease of gate leakage current by employing Al sacrificial layer in the DLC-coated Si-tip FEA fabrication
- Decrease of gate leakage current by employing Al sacrificial layer in the DLC-coated Si-tip FEA fabrication
- 주병권; 이상조; 김훈; 이윤희; 오명환
- FED; Si-tip field emitter; DLC; gate-leakage current; sacrificial layer; field emission; field emission display
- Issue Date
- 대한전기학회논문지 : 전기물성,응용부문 C; The Transactions of The Korean Institute of Electrical Engineers
- VOL 48C, NO 8, 577-579
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- KIST Publication > Article
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