Control of abnormal grain inclusions in the nanocrystalline diamond film deposited by hot filament CVD

Authors
Li, H.Lee, Hak-JooPark, Jong-KeukBaik, Young-JoonHwang, Gyu WeonJeong, Jeung-hyunLee, Wook-Seong
Issue Date
2009-11
Publisher
ELSEVIER SCIENCE SA
Citation
DIAMOND AND RELATED MATERIALS, v.18, no.11, pp.1369 - 1374
Abstract
Formation of abnormal grain inclusions in nanocrystalline diamond films deposited by hot filament CVD (HFCVD) was investigated. The phenomenon was attributed to two different origins: an intrinsic and an extrinsic one. The inclusions due to the intrinsic origin could be either avoided or weakened by controlling chamber pressure, CH4/N-2 concentrations in H-2, and by positive substrate bias. The extrinsic origin for the abnormal grains was found to be the contamination from the alumina insulation tubes for the thermocouple placed near the substrate, which were degraded by the extended exposure to the high temperature and strongly reducing atmosphere. (C) 2009 Elsevier B.V. All rights reserved.
Keywords
CHEMICAL-VAPOR-DEPOSITION; RAMAN-SPECTROSCOPY; PRESSURE; GROWTH; Nanocrystalline diamond film; Hot filament CVD; Bias growth
ISSN
0925-9635
URI
https://pubs.kist.re.kr/handle/201004/132010
DOI
10.1016/j.diamond.2009.08.009
Appears in Collections:
KIST Article > 2009
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