Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination

Title
Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination
Authors
M.H. JooK.M. ParkW.Y. Choi송종한S.Im
Keywords
ion implantation; Defects; Schottky diode; Edge termination; Breakdown voltage
Issue Date
2000-01
Publisher
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
Citation
VOL 168, NO 3, 399-403
URI
http://pubs.kist.re.kr/handle/201004/13229
ISSN
0168-583X
Appears in Collections:
KIST Publication > Article
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