Structural analysis for the stress variation of ta-C film with deposition energy: A molecular dynamics simulation

Authors
Kim, Kyung-SooLee, Seung-HyeobKim, Yoo-ChanLee, Seung-CheolCha, Pil-RyungLee, Kwang-Ryeol
Issue Date
2008-06
Publisher
KOREAN INST METALS MATERIALS
Citation
METALS AND MATERIALS INTERNATIONAL, v.14, no.3, pp.347 - 352
Abstract
Molecular dynamics simulations are performed on the atomic origin of the evolution of residual stress in tetrahedral amorphous carbon (ta-C) film using the empirical Tersoff potential. The densities of and residual stresses in the amorphous films generated by molecular dynamics simulations were found to be in good agreement with the corresponding experimental results. A radial distribution function analysis shows that the peak at approximately 2.1 angstrom found in high-stress configurations, which is referred to as a satellite peak, is closely linked with the variation of the residual stress in ta-C film.
Keywords
DIAMOND-LIKE CARBON; TETRAHEDRAL AMORPHOUS-CARBON; ELECTRONIC-PROPERTIES; GROWTH; DIAMOND-LIKE CARBON; TETRAHEDRAL AMORPHOUS-CARBON; ELECTRONIC-PROPERTIES; GROWTH; tetrahedral amorphous carbon; structural analysis; molecular dynamics simulations
ISSN
1598-9623
URI
https://pubs.kist.re.kr/handle/201004/133458
DOI
10.3365/met.mat.2008.06.347
Appears in Collections:
KIST Article > 2008
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