Overview of the Current Status of Technical Development for a Highly Scalable, High-Speed, Non-Volatile Phase-Change Memory

Authors
Suyoun LeeJeung-hyun JeongByung-ki Cheong
Issue Date
2008-03
Publisher
대한전자공학회
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.8, no.1, pp.1 - 10
Abstract
The present status of technical development of a highly scalable, high-speed non-volatile PCM is overviewed. Major technical challenges are described along with solutions that are being pursued in terms of innovative device structures and fabrication technologies, new phase change materials, and new memory schemes.
Keywords
Non-volatile; phase-change memory; phase-change material; scalability; device speed
ISSN
1598-1657
URI
https://pubs.kist.re.kr/handle/201004/133682
Appears in Collections:
KIST Article > 2008
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