Heat generation properties of Ga doped ZnO thin films prepared by rf-magnetron sputtering for transparent heaters

Authors
Kim, Jong HoonDu Ahn, ByungKim, Choong HeeJeon, Kyung AllKang, Hong SeongLee, Sang Yeol
Issue Date
2008-02-15
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.516, no.7, pp.1330 - 1333
Abstract
Ga doped ZnO (GZO) thin films were prepared by rf-magnetron sputtering on glass substrate for window heater applications. Electrical and optical properties of these films were analyzed in order to investigate on substrate temperature and rf power dependencies. High quality GZO films with a resistivity of 1.30 x 10(-4) Omega cm and a transparency above 90% in the visible range were able to be formed. GZO films have been patterned on glass substrate as a line heater. This GZO line heater showed the rapid heat radiation property from room temperature to 90 degrees C for 22 s at the applied voltage of 42 V. These results could provide a possibility to use GZO as effective transparent heaters. (c) 2007 Elsevier B.V. All rights reserved.
Keywords
Ga doped ZnO; rf-magnetron sputtering; transparent heater; transparent conducting oxides
ISSN
0040-6090
URI
https://pubs.kist.re.kr/handle/201004/133733
DOI
10.1016/j.tsf.2007.03.100
Appears in Collections:
KIST Article > 2008
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