Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer

Authors
Kim, Jae-HoOh, Do-HyunLee, Soo-JinLee, Kyu-HwanCho, Woon-JoKim, Tae WhanPark, Young Ju
Issue Date
2007-10-15
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v.308, no.2, pp.278 - 282
Abstract
Capacitance-voltage (C-P) and electrostatic force microscopy (EFM) measurements on Si nanocrystals (Si-NCs) formed by using the sonochemical method were carried out to investigate the charging effects of the Si-NCs. Transmission electron microscopy images and atomic force microscopy images showed that the Si-NCs were created inside the SiO2 layer. The C-V curve and the EFM image showed that the Si-NCs embedded in the SiO2 layer experienced charging effects. The macroscopic surface charge density determined from the C-V curve was in reasonable agreement with the microscopic local value obtained from the EFM image. The present results indicate that the EFM technique might provide a promising method for investigating charging effects in various kinds of nanocrystals embedded in the insulating layer. (C) 2007 Elsevier B.V. All rights reserved.
Keywords
SILICON NANOCRYSTALS; QUANTUM CONFINEMENT; DOTS; MEMORY; SILICON NANOCRYSTALS; QUANTUM CONFINEMENT; DOTS; MEMORY; nanostructures; nanomaterials; semiconducting silicon
ISSN
0022-0248
URI
https://pubs.kist.re.kr/handle/201004/134041
DOI
10.1016/j.jcrysgro.2007.08.031
Appears in Collections:
KIST Article > 2007
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