Size distribution effects on self-assembled InAs quantum dots

Authors
Jung, S. I.Yeo, H. Y.Yun, I.Leem, J. Y.Han, I. K.Kim, J. S.Lee, J. I.
Issue Date
2007-10
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.18, pp.S191 - S194
Abstract
We report on the unusual behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. Distinctive double-emission QD peaks are observed in the PL spectra of the samples grown on high growth-temperature condition. From the excitation power-dependent and temperature-dependent PL measurements, these double-emission peaks are associated with the ground-state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.
Keywords
MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GROWTH; INGAAS; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GROWTH; INGAAS
ISSN
0957-4522
URI
https://pubs.kist.re.kr/handle/201004/134080
DOI
10.1007/s10854-007-9205-9
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KIST Article > 2007
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