Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer

Title
Dependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer
Authors
최원준이희택우덕하이석김선호최상삼
Keywords
quantum well intermixing
Issue Date
2000-03
Publisher
2000 March Meeting Bulletin of the a Merican Physical Society
Citation
VOL 45, NO 1, 807-807
URI
http://pubs.kist.re.kr/handle/201004/13433
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE