Room-temperature ferromagnetism of cu-implanted GaN

Abstract

1 MeV Cu2+ ion was implanted into GaN with a dose of 1x10(17) cm(-2) at room temperature. After implantation, the samples were subsequently performed by rapid thermal annealing at 700, 800, and 900 degrees C for 5 min. Both nonmagnetic Cu ion implanted samples annealed at 700 and 800 degrees C exhibit the ferromagnetism at room temperature, and the saturation magnetization of these samples is estimated to be 0.057 mu(B) and 0.27 mu(B) per Cu atom from M-H curve, respectively. However, the sample annealed at 900 degrees C does not show ferromagnetism due to clustering of Cu during the annealing process. (c) 2007 American Institute of Physics.