Correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates

Authors
Shin, J. W.Lee, J. Y.No, Y. S.Kim, T. W.Choi, W. K.
Issue Date
2006-09-04
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.89, no.10
Abstract
The correlation between the atomic structures and the misorientation angles of [0001]-tilt grain boundaries at triple junctions in ZnO thin films grown on Si substrates was investigated by using high-resolution transmission electron microscopy (HRTEM) measurements. The HRTEM images showed three symmetric grain boundaries and one asymmetric grain boundary around the triple junction in the ZnO film. The correlation between the atomic structures and the misorientation angles of the grain boundaries at triple junctions in ZnO films is described on the basis of the HRTEM results. (c) 2006 American Institute of Physics.
Keywords
ELECTRONIC-STRUCTURE; SAPPHIRE; EMISSION; GAN; ELECTRONIC-STRUCTURE; SAPPHIRE; EMISSION; GAN; ZnO; grain boundary; tilt; triple junction
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/135133
DOI
10.1063/1.2338792
Appears in Collections:
KIST Article > 2006
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