Improvement of Memory windows in YMnO₃/Si Ferroelectric gate FET [Invited Paper]

Title
Improvement of Memory windows in YMnO₃/Si Ferroelectric gate FET [Invited Paper]
Authors
김용태김익수박영균
Keywords
YMnO₃
Issue Date
2000-06
Publisher
2000 Asia-Pacific Workshop on Fundamental and Application Advanced Semiconductor Devices
Citation
, 133-138
URI
http://pubs.kist.re.kr/handle/201004/13549
Appears in Collections:
KIST Publication > Conference Paper
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