Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates

Authors
Shin, JWLee, JYKim, TWNo, YSCho, WJChoi, WK
Issue Date
2006-02-27
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.88, no.9
Abstract
X-ray diffraction analysis reveals that the crystallinity of (0001)-oriented columnar grains in ZnO thin films grown on p-Si (100) substrates is enhanced with increasing growth temperature, and transmission electron microscopy confirms that the columnar structures become more stable at higher growth temperature. The morphological evolution of the columnar structure in ZnO thin films is described on the basis of experimental measurements. (c) 2006 American Institute of Physics.
Keywords
ROOM-TEMPERATURE; ZNO FILMS; SI; EMISSION; ROOM-TEMPERATURE; ZNO FILMS; SI; EMISSION; ZnO; columnar structure; p-tyep Silicon substrates
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/135743
DOI
10.1063/1.2174829
Appears in Collections:
KIST Article > 2006
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