A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

Abstract

A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AIAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.