Ammonium sulfide treatment of HgCdTe substrate and its effects on electrical properties of ZnS/HgCdTe heterostructure

Authors
Jung, YCAn, SYSuh, SHChoi, DKKim, JS
Issue Date
2005-07-01
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.483, no.1-2, pp.407 - 410
Abstract
The semiconductor-passivating layer interface, as well as the dielectric properties of the passivants, plays an important role in HgCdTe based photodiodes. ZnS is a commonly used surface passivant for HgCdTe. This study examined the effects of sulfidation on the HgCdTe surface and interfacial characteristics of metal/ZnS/HgCdTe structures. The ZnS layer was deposited by thermal evaporation after sulfidation. The interfacial properties of the metal insulator semiconductor (MIS) structures were determined. A comparison of an untreated capacitor and a sulfide treated MIS capacitor showed that the fixed charge density (untreated 6.37 x 10(11), treated 3.2 x 10(11) cm(-2)) and slow state density (untreated 5.5 x 10(11), treated 7.5 x 10(10) cm(-2)) were 2 and 7 times lower in the treated than in the untreated specimens. Sulfidation results in a decrease in the concentration of contaminants originating from the native oxide-covered HgCdTe substrates. This reduction may be due to the formation of S-S or II-S bonds at the surface layer. These bonds might act as barriers against native oxide formation when (NH4)(2)S-x-treated HgCdTe substrates are exposed to air. (c) 2004 Published by Elsevier B.V.
Keywords
ZNS; ZNS; ZnS; metal-insulator-semiconductor; surface and interface states; interface
ISSN
0040-6090
URI
https://pubs.kist.re.kr/handle/201004/136292
DOI
10.1016/j.tsf.2004.12.057
Appears in Collections:
KIST Article > 2005
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