The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

Title
The effect of N+-implanted Si(111) substrate and buffer layer on GaN films
Authors
고의관박용주김은규박찬수이석현이정희조성호
Keywords
N+-implantation; GaN; implantation; stress; single-buffer; double-buffer
Issue Date
2000-09
Publisher
Journal of crystal growth
Citation
VOL 218, NO 2, 214-220
URI
http://pubs.kist.re.kr/handle/201004/13638
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
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