Structural analysis of the reconstructed Si(001)-C surface

Authors
Park, JYSeo, JHWhang, CNKim, SSChoi, DSChae, KH
Issue Date
2005-05-22
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF CHEMICAL PHYSICS, v.122, no.20
Abstract
The atomic structure of reconstructed Si(001)c(434)-C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C2H4) molecules have been exposed on Si(001)-(231) surface at 700 degrees C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface. (c) 2005 American Institute of Physics.
Keywords
ION-SCATTERING SPECTROSCOPY; ATOMIC-STRUCTURE; SI(100); GROWTH; ION-SCATTERING SPECTROSCOPY; ATOMIC-STRUCTURE; SI(100); GROWTH; Atomic structure; Silicon; Reconstruction; Ethylene; Low energy ion scattering
ISSN
0021-9606
URI
https://pubs.kist.re.kr/handle/201004/136457
DOI
10.1063/1.1908452
Appears in Collections:
KIST Article > 2005
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