Measurements of lattice strain in MOCVD-GaN thin film grown on a sapphire substrate treated by reactive ion beam.

Title
Measurements of lattice strain in MOCVD-GaN thin film grown on a sapphire substrate treated by reactive ion beam.
Authors
김현정김긍호
Keywords
GaN; HOLZ; reactive ion beam; sapphire substrate; lattice strain
Issue Date
2001-01
Publisher
한국전자현미경학회지
Citation
VOL 30, NO 4, 337-345
URI
http://pubs.kist.re.kr/handle/201004/13658
ISSN
1225-6773
Appears in Collections:
KIST Publication > Article
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