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dc.contributor.author김현정-
dc.contributor.author김긍호-
dc.date.accessioned2015-12-02T05:09:09Z-
dc.date.available2015-12-02T05:09:09Z-
dc.date.issued200101-
dc.identifier.citationVOL 30, NO 4, 337-345-
dc.identifier.issn1225-6773-
dc.identifier.other13490-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/13658-
dc.publisher한국전자현미경학회지-
dc.subjectGaN-
dc.subjectHOLZ-
dc.subjectreactive ion beam-
dc.subjectsapphire substrate-
dc.subjectlattice strain-
dc.titleMeasurements of lattice strain in MOCVD-GaN thin film grown on a sapphire substrate treated by reactive ion beam.-
dc.typeArticle-
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