Low temperature sintering of BaTi4O9-based middle-k dielectric composition for LTCC applications

Abstract

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of BaTi4O9-based ceramics were studied to develop the middle-k dielectric composition for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of 875 degrees C. The microwave dielectric properties were k = 32, Q x f = 9000 GHz, and t(cf) = 10 ppm/degrees C. As the added amount of glass frit with base dielectric composition, phase changes from BaTi4O9 to BaTi5O11 and Ba4Ti13O30 was observed, which result in the modification of microwave dielectric properties.