Large magnetocurrents in double-barrier tunneling transistors

Abstract

Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 10(3) times larger than that of conventional MTT, since tunneling through A10(x) barrier provides much larger current density than that through Schottky barrier. (C) 2004 Elsevier B.V. All rights reserved.