Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

Authors
Choi, WKKim, DGChoi, YWLee, SWoo, DHKim, SH
Issue Date
2005-01-10
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.86, no.2
Abstract
This study demonstrates the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 muA, respectively. The lasing threshold current is 131 mA at 25 degreesC. The output peak wavelength is 1570 nm at a bias current of 1.22 I-th and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. (C) 2005 American Institute of Physics.
Keywords
MU-M; LASER-DIODE; DEVICE; MU-M; LASER-DIODE; DEVICE; Optical Thyristor; quantum well; laser; waveguide
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/136831
DOI
10.1063/1.1850184
Appears in Collections:
KIST Article > 2005
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