Coupling effect between InAs quantum dot and electric field-induced quantum dot

Abstract

The coupling effect between an InAs quantum dot and an electric-field-induced quantum dot has been investigated theoretically. When an electric field is applied between a metal probe tip and p-type semiconductor, three-dimensionally curved electric potential is formed beneath the semiconductor sub-surface region of the p-type GaAs. Accordingly, when an electric field is applied between a metal probe tip and p-type GaAs layer including InAs self-assembled quantum dots, the coupling energy states between two kinds of quantum dots, self-assembled InAs quantum dot and electric field-induced quantum dot, are formed. In this article we proved the existence of the coupling states between a single InAs quantum dot and an electric-field-induced quantum dot through the theoretical calculation on the basis of k-p theory and envelope function approximation. For this study, we solved three-dimensional Schrodinger and Poisson equations self-consistently. These results can improve the understanding of the coupling effects on the coupled quantum structures using a metal probe tip and a self-assembled quantum dot.