DSpace at KISTKIST Article2004

Intergranular film thickness of self-reinforced silicon carbide ceramics

Authors
Choi, HJ; Kim, YW
Issue Date
2004-12
Publisher
ELSEVIER SCI LTD
Citation
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.24, no.15-16, pp.3795 - 3800
Abstract
The intergranular film of self-reinforced SiC ceramics prepared by hot pressing and further annealing with SiO2-Y2O3 and SiO2-Al2O3 as sintering additives was observed by high-resolution transmission electron microscopy. The film thickness of SiC ceramics with SiO2-Y2O3 was similar to1.2 nm whereas that of ceramics with SiO2-Al2O3 was similar to0.8 nm. Based on the refined continuum model, an explanation on the variation of thickness with sintering additives is given. It seems that the behavior of intergranular glassy film of SiC ceramics is akin to that Of Si3N4 ceramics. (C) 2004 Elsevier Ltd. All rights reserved.
Keywords
TRANSMISSION ELECTRON-MICROSCOPY; NITRIDE CERAMICS; ALUMINUM NITRIDE; MICROSTRUCTURE; PHASES; CHEMISTRY; BEHAVIOR; OXIDE; SI3N4; TRANSMISSION ELECTRON-MICROSCOPY; NITRIDE CERAMICS; ALUMINUM NITRIDE; MICROSTRUCTURE; PHASES; CHEMISTRY; BEHAVIOR; OXIDE; SI3N4; SiC; liquid phase sintering; electron microscopy; grain boundaries; interphase
ISSN
0955-2219
URI
https://pubs.kist.re.kr/handle/201004/136997
DOI
10.1016/j.jeurceramsoc.2003.12.029
Appears in Collections:
KIST Article > 2004
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Full Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE