Enhancement of photoluminescence and electrical properties of Ga-doped ZnO thin film grown on α -Al ₂ O ₃ (0001) single-crystal subastrate by rf magnetron sputtering through rapid thermal annealin

Title
Enhancement of photoluminescence and electrical properties of Ga-doped ZnO thin film grown on α -Al ₂ O ₃ (0001) single-crystal subastrate by rf magnetron sputtering through rapid thermal annealin
Authors
조정나종범오민석송재훈윤기현정형진최원국
Keywords
Ga-doped ZnO(GZO); photoluminescence; rapid thermal annealing; interstitial; substitutional
Issue Date
2001-10
Publisher
Japanese Journal of Applied Physics, Part 2 - Letters
Citation
VOL 40, NO 10A, L1-L4
URI
http://pubs.kist.re.kr/handle/201004/13709
ISSN
0021-4922
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE