Reduction of defects in GaN on reactive ion beam treated sapphire by annealing

Title
Reduction of defects in GaN on reactive ion beam treated sapphire by annealing
Authors
변동진진정근조성찬김주성이상진홍창희김긍호최원국
Issue Date
2001-11
Publisher
Physica status solidi. B, Basic research
Citation
VOL 228, NO 1, 315-318
URI
http://pubs.kist.re.kr/handle/201004/13752
ISSN
0370-1972
Appears in Collections:
KIST Publication > Article
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