Generation of pulsed direct-current plasma above 100 torr for large area diamond deposition

Title
Generation of pulsed direct-current plasma above 100 torr for large area diamond deposition
Authors
이욱성채기웅은광용백영준
Keywords
DC plasma CVD; Diamond films; Deposition; Plasma
Issue Date
2001-12
Publisher
Diamond and related materials
Citation
VOL 10, NO 12, 2220-2224
Abstract
A high-temperature, large-size plasma was successfully generated at a pressure above 100 torr using a pulsed direct current (DC) electric power for the application of wafer-scale diamond thick film growth. A diode type electrode configuration was used, with a Mo disk of 13 cm in diameter as a cathode and a W disk of 10 cm in diameter as a substrate. By adjusting the pulse condition and maintaining the cathode temperature between 10008C and 11008C, the arc between the electrodes was suppressed completely and the plasma was maintained very stably for over 100 h. Above and below this cathode temperature range, solid carbon was deposited on the cathode, which induced either the arc or non-uniformity of plasma state. A diamond wafer with a thickness up to 1 mm was successfully grown using this plasma of methane and hydrogen mixed gas. The plasma characteristics were analyzed using an optical emission spectroscopy. 2001 Elsevier Science B.V. All rights reserved.
URI
http://pubs.kist.re.kr/handle/201004/13763
ISSN
0925-9635
Appears in Collections:
KIST Publication > Article
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