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Quenching of tunneling magnetoresistance at low temperatures

Authors
Lee, K. I.; Lee, J. H.; Lee, W. Y.; Shin, K. H.; Ri, H. -C.; Lee, B. C.; Rhie, K.
Issue Date
2004-05
Publisher
ELSEVIER
Citation
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp.E1493 - E1494
Abstract
It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface. (C) 2003 Published by Elsevier B.V.
Keywords
DEPENDENCE; JUNCTIONS; DEPENDENCE; JUNCTIONS; tunneling magnetoresistance; magnetic tunnel junction
ISSN
0304-8853
URI
https://pubs.kist.re.kr/handle/201004/137630
DOI
10.1016/j.jmmm.2003.12.282
Appears in Collections:
KIST Article > 2004
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