Quenching of tunneling magnetoresistance at low temperatures
- Authors
- Lee, K. I.; Lee, J. H.; Lee, W. Y.; Shin, K. H.; Ri, H. -C.; Lee, B. C.; Rhie, K.
- Issue Date
- 2004-05
- Publisher
- ELSEVIER
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp.E1493 - E1494
- Abstract
- It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface. (C) 2003 Published by Elsevier B.V.
- Keywords
- DEPENDENCE; JUNCTIONS; DEPENDENCE; JUNCTIONS; tunneling magnetoresistance; magnetic tunnel junction
- ISSN
- 0304-8853
- URI
- https://pubs.kist.re.kr/handle/201004/137630
- DOI
- 10.1016/j.jmmm.2003.12.282
- Appears in Collections:
- KIST Article > 2004
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