Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure

Title
Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure
Authors
최훈상박군상허재성최인훈김용태김성일
Keywords
SBT; 강유전체; Ta2O5; MOD; MFISFET; 전기적특성
Issue Date
2001-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 39, S228-S231
Abstract
We propose the Pt/SrBi2Ta2O9/Ta2O5/Si structure using Ta2O5 as the bu er layer for the application of non-destructive read-out memory. The Ta2O5 lms were deposited on p-type Si (100) substrates by rf-magnetron sputtering and the SrBi2Ta2O9 lms were deposited by metal organic deposition (MOD) method. Coercive eld that decisively a ects the memory window becomes greater by inserting the Ta2O5 bu er layer between ferroelectric thin lm and silicon substrate and thus the memory window also increases with an electric eld to the SrBi2Ta2O9. The C-V characteristics of the Pt/SrBi2Ta2O9 (195 nm)/Ta2O5 (36 nm)/Si structure shows memory window of 0.5-2.7 V at the applied voltage of 3-7 V. The leakage current density is 1.7 10􀀀8 A/cm2, even at the high voltage of 10 V.
URI
http://pubs.kist.re.kr/handle/201004/13777
ISSN
0374-4884
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