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Ellipsometric spectroscopy study of Ar ion-beam mixed SiO2/Si/SiO2 layers

Authors
Kim, HB; Son, JH; Whang, CN; Chae, KH
Issue Date
2004-02
Publisher
ELSEVIER SCIENCE BV
Citation
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, v.216, pp.367 - 371
Abstract
Si layer between SiO2 layers has been changed from amorphous state to other state containing Si nanocrystals by ion beam mixing and subsequent annealing at high temperature in N-2, ambient. This change was measured by ellipsometric spectroscopy. The fitting of spectra was carried out using effective medium approximation model for the sample containing Si nanocrystals. The structural change of Si layer was confirmed by cross-sectional high-resolution transmission electron microscopy. (C) 2003 Elsevier B.V. All rights reserved.
Keywords
VISIBLE PHOTOLUMINESCENCE; NANOCRYSTALLINE-SILICON; SI; RECRYSTALLIZATION; LUMINESCENCE; INTERFACE; FILMS; VISIBLE PHOTOLUMINESCENCE; NANOCRYSTALLINE-SILICON; SI; RECRYSTALLIZATION; LUMINESCENCE; INTERFACE; FILMS; ion beam mixing; ellipsometric spectroscopy; transmission electron microscopy; Si nanocrystals
ISSN
0168-583X
URI
https://pubs.kist.re.kr/handle/201004/137889
DOI
10.1016/j.nimb.2003.11.062
Appears in Collections:
KIST Article > 2004
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