Computer simulation of switching characteristics and magnetization flop in magnetic tunnel junctions exchange biased by synthetic antiferromagnets

Title
Computer simulation of switching characteristics and magnetization flop in magnetic tunnel junctions exchange biased by synthetic antiferromagnets
Authors
엄영랑임상호
Keywords
magnetic tunnel junctions; magentization switching; magnetization-flop; size effects; magnetostatic interaction; computer simulation
Issue Date
2001-12
Publisher
Journal of Magnetics
Citation
VOL 6, NO 4, 132-141.
Abstract
The switching characteristics and the magnetization-flop behavier in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) ard investigated by using a computer simulations based on single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimension due to latger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization direction of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer swiching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antifrromagnet. Irrespective of the magnetic parameters and cell size, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.
URI
http://pubs.kist.re.kr/handle/201004/13792
ISSN
1226-1750
Appears in Collections:
KIST Publication > Article
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