Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots

Title
Effects of AlGaAs inserting layer on the optical properties of InGaAs/GaAs quantum dots
Authors
S.K.Park박용주Y.M.ParkH.J.KimE.K.KimC.Lee
Keywords
insertion layer; quantum dots; red-shift
Issue Date
2001-12
Publisher
Journal of the Korean Physical Society
Citation
VOL 39, S250-S252
Abstract
We report e ects of AlGaAs inserting layer (IL) on the optical properties of InGaAs/GaAs quantum dots. Thin AlGaAs insertion layer were positioned right after the formation of self-assembled InGaAs quantum dots on GaAs bu er layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 m in the sample without IL whereas it is red-shifted up to 1.25 m according to the thickness of IL. The quantum dot emission wavelength can be controllably changed from 1.1 m to 1.25 m by increasing the IL thickness. It is expected that thin AlGaAs IL may play a role of release layer of strain between QDs and capping layer.
URI
http://pubs.kist.re.kr/handle/201004/13795
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE