Postannealing effect of GaN on reactive ion beam pre-treated sapphire.
- Postannealing effect of GaN on reactive ion beam pre-treated sapphire.
- 이상진; 변동진; 고재정; 홍창희; 김긍호
- Issue Date
- Journal of the Korean Physical Society
- VOL 39, S478-S483
- Previous study showed that the reactive ion beam (RIB) pretreatment of sapphire prior to GaN
deposition results in the reduction of dislocation density in GaN lm. Also there was an amorphous
phase remaining at the interface region after the GaN deposition at high temperature. Postannealing
process was employed to see the structural change due to the recrystallization of the remaining
amorphous phase, and the postannealing e ect on electrical property of the GaN thin lm on RIB
treated sapphire (0001) substrate. FWHM of DCXRD spectra and hall mobility of the specimen
showed the variation with the various postannealing time at 1000 C in N2 atmosphere. For the
postannealed specimen, FWHM of DCXRD reduced about 50arc-sec and the mobility increased
about 80 cm2/V sec. The postannealed specimen with the best mobility was compared with not
annealed sample by TEM and observe the decrease of lattice strain and reduction of dislocation
density about 56 59 %. The present results clearly show that the combination of RIB pretreatment
and proper post annealing conditions results in the improved properties of GaN lms grown by
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