Magnetization reversal under nonuniform magnetic fields at conditions relevant to magnetic random access memory applications
- Authors
- Kim, KS; Lee, CE; Lim, SH
- Issue Date
- 2003-11-03
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.83, no.18, pp.3761 - 3763
- Abstract
- Magnetization reversal behavior is examined under various nonuniform fields, the conditions of which are relevant to magnetic random access memory applications. During the magnetization reversal, the end domains play a key role at a uniform field, but they play a negligible role at a nonuniform field. Instead, a ripple pattern is initially formed in the interior and it progresses to form a vortex, resulting in a reversed domain. The switching field is found to be greater in the case of a nonuniform field, but, under a bias field, it is reduced greatly to a level similar to that for a uniform field. This result may indicate a wide window for the bit selectivity under a nonuniform field in magnetic random access memory applications. (C) 2003 American Institute of Physics.
- Keywords
- ELEMENTS; ELEMENTS; magnetization reversal; nonuniform magnetic field; computer simulation; magnetic random access memory
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/138089
- DOI
- 10.1063/1.1625105
- Appears in Collections:
- KIST Article > 2003
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