Preparation of 0.5 mu m thick self-patternable PZT films by sol-gel procedure for applying to the micro-detection system

Authors
Hwang, JSKim, WSPark, HHKim, TS
Issue Date
2003-10
Publisher
ELSEVIER
Citation
MICROELECTRONIC ENGINEERING, v.70, no.1, pp.73 - 77
Abstract
Lead zirconate titanate (PbZrxTi1-xO3; PZT) (x=0.52) films using photosensitive PZT solution were formed on platinum(111)-coated Si substrate by sol-gel method. A relative thick self-patternable PZT film using photosensitive stock solution with 15% of excess Pb and UV (365 nm) irradiation has reached an advanced state in the application area of micro-detection system. Well-developed physical and electrical properties were observed after final anneal treatment due to the adaptation of optimized intermediate anneal treatment to remove organic groups in the film without the formation of pyrochlore phase. The 510 nm thick PZT film with smooth surface showed remnant polarization (P-x) of 25 muC/cm(2), coercive field (E-c) of 45 kV/cm, and piezoelectric coefficient of d(33)=183 pC/N. The film showed a little leaky behavior when comparing with conventional PZT films prepared by sol-gel procedure and it was due to the incomplete removal of organic bonds through the intermediate anneal treatment. From the consideration of thickness, microstructure, and ferroelectric /piezoelectric properties of this self-patternable PZT film, it could be applicable to the micro-detecting system. (C) 2003 Published by Elsevier B.V.
Keywords
sol-gel; self-patternable PZT; photosensitizer; micro-detecting system
ISSN
0167-9317
URI
https://pubs.kist.re.kr/handle/201004/138204
DOI
10.1016/S0167-9317(03)00392-7
Appears in Collections:
KIST Article > 2003
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