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Effects of Mn flux on ferromagnetic properties of (Ga,Mn)N films grown by PEMBE

Authors
Huh, KS; Jeong, MC; Ham, MH; Myoung, JM; Lee, WY; Lee, JM; Han, SH
Issue Date
2003-10
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
SOLID STATE COMMUNICATIONS, v.128, no.4, pp.119 - 123
Abstract
Effects of Mn flux on the magnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy (PEMBE) discussed. The (Ga,Mn)N thin films were found to exhibit ferromagnetic ordering at room temperature without any secondary phases by X-ray diffraction and alternating gradient magnetometer. It is found that, although the surface morphology and the electrical properties are degraded with increasing Mn concentration, the magnetic properties of the films improve. (C) 2003 Elsevier Ltd. All rights reserved.
Keywords
DILUTED MAGNETIC SEMICONDUCTOR; ROOM-TEMPERATURE; GAN-MN; DILUTED MAGNETIC SEMICONDUCTOR; ROOM-TEMPERATURE; GAN-MN; (Ga,Mn)N; diluted magnetic semiconductor (DMS); PEMBE; ferromagnetism
ISSN
0038-1098
URI
https://pubs.kist.re.kr/handle/201004/138213
DOI
10.1016/j.ssc.2003.08.002
Appears in Collections:
KIST Article > 2003
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