Effects of postannealing on GaN grown by MOCVD on reactive ion beam pretreated sapphire substrate

Title
Effects of postannealing on GaN grown by MOCVD on reactive ion beam pretreated sapphire substrate
Authors
이상진변동진홍창희김긍호
Keywords
GaN; MOCVD; reactive ion beam; 열처리
Issue Date
2001-03
Publisher
한국재료학회지; Korean Journal of Materials Research
Citation
VOL 11, NO 3, 191-196
URI
http://pubs.kist.re.kr/handle/201004/13824
ISSN
1225-0562
Appears in Collections:
KIST Publication > Article
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