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dc.contributor.authorHeo, DC-
dc.contributor.authorSong, JD-
dc.contributor.authorChoi, WJ-
dc.contributor.authorLee, JI-
dc.contributor.authorJeong, JC-
dc.contributor.authorHan, IK-
dc.date.accessioned2024-01-21T08:33:56Z-
dc.date.available2024-01-21T08:33:56Z-
dc.date.created2021-09-03-
dc.date.issued2003-08-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138374-
dc.description.abstractSuperluminescent diodes (SLDs) using an In0.5Ga0.5As quantum dot (QD) were fabricated. The In0.5Ga0.5As QDs were formed by a five-period superlattice of InAs (1 monolayer) and GaAs (1 monolayer). The QDs were three-stacked with the 40-nm-thick GaAs barrier layer and the total dot density was 5 x 10(10) cm(-2). The output power and spectral width of the SLD using these three-stacked QDs are 0.9 W and 80 nm, covering the range from 980 to 1060 nm, respectively.-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.subjectLASERS-
dc.titleCharacteristics of superluminescent diodes utilizing In0.5Ga0.5As quantum dots-
dc.typeArticle-
dc.identifier.doi10.1143/JJAP.42.5133-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.8, pp.5133 - 5134-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS-
dc.citation.volume42-
dc.citation.number8-
dc.citation.startPage5133-
dc.citation.endPage5134-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000185422900050-
dc.identifier.scopusid2-s2.0-0142075835-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusLASERS-
dc.subject.keywordAuthorsuperluminescent diodes-
dc.subject.keywordAuthorquantum dot-
dc.subject.keywordAuthorshort-period superlattice-
dc.subject.keywordAuthorlight emitting diodes-
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KIST Article > 2003
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