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dc.contributor.author박전웅-
dc.contributor.author김익수-
dc.contributor.author김성일-
dc.contributor.author김용태-
dc.contributor.author성만영-
dc.date.accessioned2024-01-21T08:40:13Z-
dc.date.available2024-01-21T08:40:13Z-
dc.date.created2022-01-10-
dc.date.issued2003-06-
dc.identifier.issn1226-9360-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/138486-
dc.languageKorean-
dc.publisher한국마이크로전자및패키징학회-
dc.titlePt/SBT/Si, Pt/SBT/Pt 강유전체 게이트 구조에서 수소 열화 현상 및 IR 게이트 전극에 의한 열화 방지 방법-
dc.title.alternativeHydrogen Degradation of Pt/SBT/Si, Pt/SBT/Pt Ferroelectric Gate Structuresand Degradation Resistance of Ir Gate Electrode-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation마이크로전자 및 패키징학회지, v.10, no.2, pp.8 - 54-
dc.citation.title마이크로전자 및 패키징학회지-
dc.citation.volume10-
dc.citation.number2-
dc.citation.startPage8-
dc.citation.endPage54-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.identifier.kciidART000863779-
dc.subject.keywordAuthorhydrogen annealing-
dc.subject.keywordAuthorBi-layered perovskite-
dc.subject.keywordAuthorinterface trap-
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KIST Article > 2003
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