A study on the low temperature growth of SiC film with a 1,3-DSB precursor

Other Titles
단일전구체 (1,3-DBS)에 의한 저온 SiC 박막 성장에 관한 연구
Authors
양재웅노대호윤진국김재수
Issue Date
2003-05
Citation
한국표면공학회지 = J. Kor. Inst. Surf. Eng., v.36, no.2, pp.141 - 147
Keywords
SiC; CVD; precursor
URI
https://pubs.kist.re.kr/handle/201004/138594
Appears in Collections:
KIST Article > 2003
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