Spectral response change in a quantum well infrared photodetector by using quantum well intermixing

Authors
Shin, JCChoi, WJHan, IKPark, YJLee, JIKim, HJChoi, JWKim, EK
Issue Date
2003-02
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S165 - S168
Abstract
We have studied the change of spectral response in a Quantum Well Infrared Photodetector (QWIP) by using the Impurity Free Vacancy Disordering (IFVD) technique to change the bandgap of GaAs/AlGaAs Multi Quantum-Well (MQW) absorption layer. The fabricated QWIP whose MQW absorption region was intermixed by an IFVD technique showed the maxinium change in spectral response peak from 8 to 10 mm at 10K when compared to a QWIP without intermixing.
Keywords
SIN CAPPING LAYER; BAND; SIN CAPPING LAYER; BAND; quantum well; infrared photodetector; quantum well intermixing
ISSN
0374-4884
URI
https://pubs.kist.re.kr/handle/201004/138886
Appears in Collections:
KIST Article > 2003
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